Rapid Thermal Processing RTP Atmosphere Controlled Bottom Loading Furnace 1100C High Throughput 50C per Second Heating Rate

Atmosphere Furnace

Rapid Thermal Processing RTP Atmosphere Controlled Bottom Loading Furnace 1100C High Throughput 50C per Second Heating Rate

Item Number: TU-DZ11

Maximum Heating Rate: 50°C/s Temperature Range: 1100°C Maximum (1000°C Continuous) Wafer Capacity: Up to 6-inch Diameter
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Product Overview

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This rapid thermal processing (RTP) system represents a pinnacle in high-speed thermal treatment technology, specifically engineered for advanced material science and semiconductor research. By utilizing high-intensity shortwave infrared heating, the equipment achieves exceptional ramp rates up to 50°C/s, allowing for precise control over thermal budgets and phase transitions. This unit is designed as a bottom-loading system, which significantly enhances sample handling safety and allows for seamless integration with automated robotic workflows in modern high-throughput laboratory environments.

Primary use cases for this equipment include the preparation of single-atom catalysts, rapid annealing of silicon or compound semiconductor wafers up to 6 inches, and complex sintering processes where cooling and heating rates are critical to material properties. The system's ability to operate under strictly controlled atmospheres or high-vacuum conditions makes it indispensable for researchers in nanotechnology, energy storage, and electronic components. Its robust design ensures it can handle the repetitive thermal stress associated with rapid cycling without compromising structural integrity or process repeatability.

Industrial and academic buyers can rely on this system for consistent performance under demanding R&D conditions. The combination of precision PID control, high-purity quartz containment, and advanced data logging software provides a reliable foundation for scaling laboratory-scale experiments to industrial pilot production. The equipment's versatility in atmosphere management—ranging from micro-positive pressure to high vacuum—ensures it meets the rigorous standards required for sensitive chemical vapor deposition and annealing processes.

Key Features

  • Ultra-Fast Shortwave Infrared Heating: Equipped with 12 high-output shortwave infrared lamps, this system achieves a maximum heating rate of 50°C/s. This allows researchers to minimize unwanted diffusion and maximize throughput for time-sensitive thermal processes.
  • Automated Bottom Loading Mechanism: The precise vertical sample loading system ensures stable placement and allows for the automated sealing of the furnace chamber. This configuration is ideal for delicate samples and facilitates easy integration with external robotic arms for 24/7 operation.
  • Advanced Atmosphere and Vacuum Control: The integrated system features a high-precision resistance vacuum gauge and support for micro-positive pressure control (103,000–120,000 Pa). This ensures a stable and contaminant-free environment for sensitive chemical reactions and material synthesis.
  • Multi-Unit Scalability and PC Control: The proprietary software supports the simultaneous control of multiple furnace units from a single workstation. This capability allows for the deployment of furnace clusters that can be synchronized with robotic sample placement for massive high-throughput sintering campaigns.
  • Precision PID Thermal Management: An intelligent 50-segment programmable temperature controller maintains ±1°C accuracy. For extreme precision requirements, an optional upgrade to a Eurotherm controller provides ±0.1°C stability, ensuring perfect repeatability across batches.
  • Robust Dual-Layer Chamber Construction: The furnace utilizes a dual-layer stainless steel shell with integrated air cooling. This engineering choice maintains low exterior temperatures for operator safety and enhances the longevity of internal electronics and heating elements.
  • High-Purity Alumina Fiber Insulation: High-density alumina fiber provides superior thermal insulation and energy efficiency. This material choice ensures rapid response times by minimizing the thermal mass of the furnace lining.
  • Integrated Mass Flow Control (MFC): The system includes built-in MFCs with a range of 0-5000sccm, allowing for precise gas delivery during atmospheric treatment and ensuring consistent stoichiometry in processed materials.
  • Comprehensive Data Acquisition: The included software package records all critical parameters, including temperature profiles, vacuum levels, and gas flow rates. This data can be exported and uploaded via standard communication interfaces for complete process traceability.

Applications

Application Description Key Benefit
Semiconductor Wafer Annealing Rapid thermal annealing of silicon, GaAs, or SiC wafers up to 6 inches in diameter. Minimizes dopant diffusion and thermal budget while improving crystalline structure.
Single-Atom Catalysis Precise synthesis and treatment of catalyst materials at specific temperature plateaus. Provides the high-speed thermal response necessary to freeze kinetic states in catalytic materials.
High-Throughput Sintering Automated sintering of ceramic or metallic samples using robotic integration for continuous operation. Dramatically reduces labor costs and increases sample volume for industrial R&D.
Rapid Thermal Oxidation (RTO) Formation of thin oxide layers on substrate surfaces under controlled oxygen concentrations. Ensures uniform, high-quality dielectric layers with sub-nanometer thickness control.
Thin Film Crystallization Fast heating of deposited thin films to promote grain growth and improve conductivity. Prevents substrate degradation by limiting the duration of high-temperature exposure.
Carbon Nanotube Synthesis Controlled atmosphere CVD processes for the growth of nanotubes and graphene structures. Precise flow control and rapid ramp-downs enable tight control over nanostructure morphology.

Technical Specifications

Main System: TU-DZ11

Parameter Specifications
Power Supply Three-phase AC 208V, 50/60Hz
Maximum Power 18 kW
Max Operating Temp 1100℃ (≤ 30 minutes)
Long-term Operating Temp 1000℃
Heating Elements 12 Shortwave infrared lamps (1.5 kW per lamp)
Heating Zone Φ210mm × 100mm
Heating Rate Recommended 10℃/s; Maximum 50℃/s
Cooling Rate (Sealed) 800℃ to 350℃: 55℃/min; 350℃ to 200℃: 5℃/min
Cooling Rate (Open) 800℃ to 350℃: 200℃/min; 350℃ to 50℃: 35℃/min
Temp Control Accuracy ±1℃ (Optional Eurotherm upgrade for ±0.1℃)
Vacuum System Control Integrated resistance vacuum gauge; 103,000–120,000 Pa control
Gas Flow Control Built-in MFC (0-5000sccm)
Tube Material Φ200mm High-purity Quartz
Sample Stage Diameter 105mm with 76×58mm recess (customizable)
Flange System Water-cooled stainless steel sealing flanges with KF25 vacuum port

Optional Robotic Assistance

Feature Robotic Arm Data
Rated Load 5 kg
Working Radius 900 mm
Max Arm Reach 1096 mm
Repeat Accuracy ±0.02 mm
Communication TCP/IP, Modbus, Wireless Network
Weight 25 kg

Optional Water Chiller & Vacuum

Unit Performance Data
Chiller (KJ6500) 51880 BTU/h cooling capacity; 4.6kW-5.12kW compressor power
Mechanical Pump Vacuum level up to 10⁻² Torr
Molecular Pump Vacuum level up to 10⁻⁴ Torr
Rotary Vane Pump NRTL certified, 240 L/m heavy duty with exhaust filter

Why Choose Us

  • Unrivaled Thermal Speed: The 50°C/s ramp rate of this unit allows for the exploration of material phases that are unreachable with standard resistive furnaces, providing a significant competitive edge in research.
  • Ready for Industry 4.0: With native support for robotic integration, multi-unit PC control, and open-source software loops, this system transitions seamlessly from manual lab use to fully autonomous, 24-hour production cycles.
  • Precision Engineering and Sealing: The high-specification stainless steel water-cooled flanges and intelligent pressure regulation ensure the highest levels of atmosphere purity, protecting sensitive samples from oxidation or contamination.
  • Scalable Research Infrastructure: The ability to operate multiple units via a single interface makes this equipment the ideal choice for expanding research facilities that require consistent, reproducible results across multiple processing lines.
  • Exceptional Build Quality: From the high-purity alumina fiber insulation to the silicon-controlled rectifier (SCR) power regulation, every component is selected for long-term durability and operational consistency in high-intensity environments.

Contact our technical sales team today for a comprehensive quote or to discuss a custom configuration tailored to your specific material processing requirements.

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