1200C Dual Sliding Tube Furnace with Dual Tubes and Flanges for PECVD Processes

RTP Furnace

1200C Dual Sliding Tube Furnace with Dual Tubes and Flanges for PECVD Processes

Item Number: TU-RT11

Maximum Temperature: 1200°C RF Generator Power: 5 - 300W Adjustable Heating/Cooling Rate: Up to 15°C/sec
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Product Overview

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This high-temperature dual-sliding furnace system represents a sophisticated solution for Plasma Enhanced Chemical Vapor Deposition (PECVD) and rapid thermal processing. By integrating two independent heating units onto a precision-engineered sliding rail, the equipment allows for unparalleled control over thermal gradients and transition speeds. It is specifically engineered to meet the rigorous demands of material science researchers who require precise vapor phase reactions and high-quality thin-film deposition across varying thermal zones.

Primarily utilized in semiconductor fabrication, nanomaterial synthesis, and advanced coatings research, this system excels in environments where rapid heating and cooling are critical to achieving specific material phases. The dual-furnace configuration enables the physical separation of precursor evaporation and substrate deposition zones, a key requirement for complex material growth like perovskites or 2D crystals. Target industries include aerospace, energy storage, and optoelectronics, where material purity and structural integrity are paramount for next-generation technology development.

Built for industrial-grade reliability, the unit utilizes high-purity quartz and advanced thermal insulation to maintain exceptional thermal stability. The robust sliding mechanism and integrated RF plasma source ensure that the equipment performs consistently under demanding continuous operation cycles. This system provides a stable and repeatable platform for high-temperature synthesis, offering industrial and academic labs the confidence to execute complex experimental protocols without compromising on precision or safety.

Key Features

  • Dynamic Dual-Furnace Sliding System: The equipment features two independent furnaces mounted on a 1200 mm Cr-plated steel sliding rail. This allows the heating chambers to be moved manually up to 400 mm, enabling users to switch between source evaporation and deposition zones or achieve rapid thermal quenching by moving the heat source away from the sample.
  • High-Performance RF Plasma Integration: Equipped with a 13.56 MHz, 300W RF generator with automatic matching, this system enables Plasma Enhanced Chemical Vapor Deposition. The plasma source allows for film growth at significantly lower temperatures compared to traditional CVD, preserving the integrity of sensitive substrates.
  • Rapid Thermal Processing (RTP) Capabilities: By pre-heating one furnace and sliding it over the processing zone, the system can achieve extreme heating and cooling rates (up to 15°C/sec in specific ranges), allowing for the study of high-temperature kinetics and rapid annealing processes.
  • Precision PID Temperature Regulation: Each furnace unit is controlled by a dedicated PID automatic controller featuring 30 programmable segments. This ensures a constant temperature zone accuracy of ±1°C, providing the consistency required for sensitive chemical vapor deposition.
  • Advanced Safety and Durability: The furnaces utilize a double-layer steel structure with air cooling to maintain a low external surface temperature. Built-in over-temperature alarms and protection systems allow for safe, unattended operation during long deposition cycles.
  • High-Purity Material Environment: The system includes a 50mm OD high-purity fused quartz tube and stainless steel vacuum flanges. This setup ensures a clean, vacuum-tight environment suitable for high-purity material synthesis and low-pressure processing.
  • Versatile Thermal Gradient Control: The dual-zone design allows for independent heating of precursors and substrates. This is critical for materials with different vapor pressures, ensuring stoichiometric balance in the reaction zone.
  • Modular Expansion Options: The system is designed to grow with research needs, supporting optional motorized sliding rails, multi-channel gas mixing systems, and PC-based control modules for automated data logging and profile management.

Applications

Application Description Key Benefit
Perovskite Solar Cells Independent control of MAI and PbX2 evaporation zones during deposition. Precise adjustment of film thickness and grain size uniformity.
2D Material Synthesis Large-scale CVD growth of Graphene, MoS2, and other transition metal dichalcogenides. High-quality crystalline structure with repeatable growth parameters.
Carbon Nanotubes (CNT) Low-temperature PECVD growth on various substrates using metal catalysts. Controlled density, alignment, and reduced thermal damage to substrates.
Semiconductor Thin Films Deposition of Silicon Nitride or Silicon Oxide passivation layers. Superior dielectric properties and adhesion achieved at lower thermal budgets.
CsPbBr3 Microcrystals Providing distinct temperature gradients (e.g., 780°C and 465°C) for disparate precursors. Ideal stoichiometric ratio and phase purity in the reaction zone.
Thermal Quenching Studies Rapidly shifting the heating chamber to induce sudden temperature drops. Ability to freeze high-temperature phases for metallurgical analysis.
Optoelectronic Coatings Deposition of transparent conductive oxides and multi-layer interference filters. Exceptional optical clarity and consistent film thickness across the batch.

Technical Specifications

Parameter Details for TU-RT11
Item Number TU-RT11
Furnace Structure Dual independent units, double-layer steel with air cooling
Max. Working Temperature 1200°C (< 1 hour)
Continuous Working Temp 1100°C
Heating Zone Length 200 mm per furnace (400 mm total)
Constant Temperature Zone 60 mm (±1°C @ 400-1200°C)
Sliding Mechanism Manual Cr-plated steel rail, 1200 mm length, 400 mm travel
Heating Rate (RT-150°C) 15°C/sec
Heating Rate (150-250°C) 10°C/sec
Heating Rate (250-350°C) 7°C/sec
Heating Rate (350-500°C) 4°C/sec
Cooling Rate (1000-950°C) 15°C/sec
Cooling Rate (950-900°C) 10°C/sec
Cooling Rate (500-400°C) 1°C/sec
Plasma RF Generator 13.56 MHz, 5-300W adjustable, ± 1% stability
RF Matching Automatic
Processing Tube High purity fused quartz, 50mm O.D x 44mm I.D x 1500mm L
Temperature Control Dual PID controllers, 30 segments, ±1°C accuracy
Thermocouple Two K-type thermocouples
Vacuum Level Limited to 1000°C for quartz; < 0.2 bar / 3 psi
Power Requirements AC 120V or 208-240V Single Phase, 50/60 Hz, 2.5 KW total
Compliance CE Certified (Plasma Generator and Furnace)

Why Choose TU-RT11

  • Advanced Dual-Zone Versatility: Unlike standard tube furnaces, the dual-sliding design of the TU-RT11 allows for complex multi-stage thermal processing and independent precursor management, which is vital for modern material science.
  • Superior Thermal Agility: The ability to achieve cooling and heating rates of up to 15°C/sec provides researchers with a tool capable of simulating industrial rapid thermal processing (RTP) and quenching environments.
  • Precision Engineering: With automatic RF matching and ±1°C temperature accuracy, this system eliminates the variables in PECVD, ensuring that your thin-film deposition is repeatable and of the highest quality.
  • Comprehensive Compliance and Safety: Every unit is CE certified and built with double-layer safety structures, ensuring a safe laboratory environment even during high-temperature, high-power RF operations.
  • Customizable Solutions: From alloy tubes for high-pressure applications to motorized sliding and multi-channel gas delivery, we offer extensive customization to tailor the equipment to your specific research goals.

Contact our technical sales team today for a detailed quote or to discuss how we can customize this high-performance PECVD system for your specific research requirements.

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