Chemical Vapor Deposition CVD System Slide PECVD Tube Furnace with Liquid Gasifier PECVD Machine

PECVD Machine

Chemical Vapor Deposition CVD System Slide PECVD Tube Furnace with Liquid Gasifier PECVD Machine

Item Number: TU-PE01

Maximum Operating Temperature: 1200°C RF Plasma Power Range: 5 - 500W (Adjustable) Gas Control System: 4-Channel MFC Mass Flow Meter
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Product Overview

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This high-performance Chemical Vapor Deposition (CVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) system represents a pinnacle in thin-film deposition technology. The equipment is specifically engineered to provide a versatile platform for synthesizing a wide variety of functional films, coatings, and nanostructures. By integrating a 500W RF plasma source with a precision slide-out tube furnace and a sophisticated liquid gasifier, this system enables the deposition of high-purity materials at lower temperatures than traditional thermal CVD processes. The core value proposition lies in its ability to deliver molecular-level control over film morphology and crystallinity while maintaining exceptional throughput through its rapid thermal cycling capabilities.

Primarily utilized in advanced research and industrial R&D environments, the equipment serves critical roles in semiconductor processing, solar cell fabrication, and materials science. It is designed to accommodate the rigorous demands of modern laboratory workflows, allowing researchers to transition seamlessly between different precursors and deposition parameters. This unit is particularly effective for developing next-generation electronics, high-efficiency photovoltaics, and specialized optical coatings where film uniformity and interface quality are paramount. The inclusion of a liquid gasifier expands its utility, allowing for the use of liquid-phase precursors which are essential for many modern organometallic and specialized chemical processes.

Reliability and performance are the cornerstones of this thermal processing system. Constructed with high-purity Japan alumina fiber insulation and robust Cr2Al2Mo2 heating elements, the system ensures consistent thermal uniformity across the entire heating zone. The integrated sliding mechanism not only facilitates rapid cooling to preserve delicate film structures but also enhances operational safety and efficiency. Every component, from the stainless steel vacuum flanges to the advanced mass flow controllers, is selected for its ability to withstand demanding industrial conditions, ensuring that the equipment delivers repeatable results over thousands of operational cycles with minimal downtime.

Key Features

  • Advanced RF Plasma Source: The system incorporates a 13.56 MHz RF plasma unit with automatic matching and an adjustable output range of 5-500W. This allows for stable glow discharge and precise control over plasma density, enabling the deposition of thin films at significantly reduced substrate temperatures compared to conventional thermal methods.
  • Dynamic Sliding Furnace Mechanism: The furnace chamber is mounted on a 600mm sliding track system, allowing the entire heating unit to move away from the reaction zone. This feature facilitates ultra-fast cooling rates and allows for quick access to the sample tube, drastically reducing batch cycle times and improving productivity in busy lab environments.
  • High-Precision Gas Delivery: Equipped with a four-channel Mass Flow Controller (MFC) system, the equipment provides exact regulation of process gases including O2, CH4, H2, and N2. This ensures a stable and premixed gas supply, which is critical for maintaining chemical stoichiometry and achieving uniform film thickness across the substrate.
  • Integrated Liquid Gasifier: The specialized liquid gasification unit allows the system to handle liquid precursors with the same precision as gaseous sources. This capability is essential for advanced CVD processes that require specific organometallic or chemical precursors not available in gas form.
  • Sophisticated Thermal Control: Utilizing a PID programmable controller with a 7-inch TFT touch screen, the system maintains a temperature accuracy of ±1°C. The interface provides real-time data visualization, historical data analysis, and the ability to store complex heating profiles, ensuring repeatable process conditions.
  • Premium Material Construction: The heating chamber is lined with high-purity alumina fiber from Japan, which offers superior insulation and low heat storage. This is paired with a high-purity quartz reaction tube, ensuring that the processing environment remains free from contaminants and can withstand temperatures up to 1200°C.
  • Versatile Vacuum Infrastructure: The unit features high-quality stainless steel vacuum flanges with multiple ports, making it compatible with various pumping stations. Whether using a standard rotary vane pump for medium vacuum or a molecular pump for high-vacuum applications, the system maintains excellent seal integrity and low base pressures.
  • Enhanced Safety Protocols: Safety is prioritized through integrated over-current and over-temperature protection. The system also includes a thermocouple failure detection mechanism and a power-failure restart function, which automatically resumes heating programs to protect valuable samples during unforeseen utility interruptions.
  • Optimized Solar Cell Processing: Specifically designed graphite boat structures are available to improve the power generation output of solar cell wafers. This design effectively eliminates the common color difference issues associated with tubular PECVD processes, ensuring aesthetic and functional uniformity in photovoltaic products.

Applications

Application Description Key Benefit
Solar Cell Fabrication Deposition of anti-reflective coatings and passivation layers on silicon wafers. Eliminates color variance and increases solar conversion efficiency through superior film uniformity.
Semiconductor Processing Growth of dielectric layers, silicon nitride, and silicon oxide thin films. Low-temperature plasma processing prevents damage to sensitive underlying semiconductor structures.
Nanotechnology Synthesis of carbon nanotubes (CNTs), graphene, and various nanowires. Precise control over gas ratios and plasma density allows for molecular-level architecture of nanostructures.
Optics and Photonics Deposition of multi-layer optical coatings and waveguide materials. Exceptional step coverage and conformality on complex 3D microstructures for superior optical performance.
Materials Research Investigation of new thin-film materials and surface modification techniques. High flexibility in temperature profiles and gas compositions supports diverse R&D requirements.
Hard Coatings Application of wear-resistant and corrosion-resistant coatings on industrial tools. Enhances material durability and lifespan through high-purity, dense film deposition.
Sensor Development Fabrication of gas sensors and biosensors using specialized thin-film layers. High-accuracy MFC control ensures the exact chemical stoichiometry required for sensitive detection.

Technical Specifications

Furnace and Thermal Parameters

Parameter Specification (TU-PE01)
Maximum Temperature 1200℃
Constant Operating Temperature 1100℃
Furnace Tube Material High-purity quartz
Furnace Tube Diameter 60mm
Heating Zone Length 450mm (single zone)
Chamber Insulation Japan alumina fiber
Heating Element Cr2Al2Mo2 wire coil
Heating Rate 0-20℃/min
Thermal Couple Built-in K-type
Temperature Control Accuracy ±1℃
Sliding Distance 600mm

RF Plasma System

Parameter Specification (TU-PE01)
Output Power 5 - 500W adjustable
Power Stability ± 1%
RF Frequency 13.56 MHz (±0.005% stability)
Reflection Power 350W maximum
Matching Type Automatic
Cooling Method Air cooling
Noise Level <50 dB

Gas Control and Delivery

Parameter Specification (TU-PE01)
Flow Meter Type MFC Mass Flow Meter
Number of Channels 4 Channels
Gas Channel 1 0-5 SCCM O2
Gas Channel 2 0-20 SCCM CH4
Gas Channel 3 0-100 SCCM H2
Gas Channel 4 0-500 SCCM N2
Linearity / Repeatability ±0.5% F.S. / ±0.2% F.S.
Pipeline Material Stainless Steel
Max Operating Pressure 0.45 MPa

Vacuum Performance Options

Component Standard Vacuum Unit High Vacuum Unit (Optional)
Pump Type Rotary vane vacuum pump Rotary vane + Molecular pump
Flow Rate 4 L/S 4 L/S + 110 L/S
Suction Port KF25 KF25
Vacuum Gauge Pirani/Resistance gauge Compound vacuum gauge
Rated Pressure 10 Pa 6 x 10^-4 Pa

Why Choose This Product

  • Superior Thermal Engineering: By combining Japan-sourced alumina fiber insulation with high-precision PID controls, this system ensures the thermal stability required for the most sensitive material growth processes.
  • Operational Efficiency: The innovative sliding furnace design and automated RF matching significantly reduce the manual labor and time required for each run, making it a high-throughput solution for busy laboratories.
  • Robust Safety and Reliability: With built-in protections against over-temperature, current surges, and thermocouple failure, the system is designed for long-term, unattended operation in critical research environments.
  • Full Customization Capability: We offer deep customization services for the TU-PE01, including specialized gas channels, higher vacuum configurations, and custom software integration to meet your specific R&D requirements.
  • Unmatched Thin Film Quality: The precision of the 4-channel MFC system and the stability of the 500W RF source ensure that every film deposited meets the highest standards of uniformity and purity.

Contact us today to discuss your specific application requirements or to receive a custom quote for your thermal processing needs.

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